Abstract
By newly introducing InGaP tensile strained layer as barriers of InAsP compressively strained multiple quantum wells, a high crystalline quality of InAsP/InGaP strain-compensated multiple quantum wells was obtained using metalorganic chemical vapor deposition on (100) InP substrate. Strain compensation was clearly confirmed by the surface morphology, double crystal X-ray measurement and photoluminescence spectrum. A first laser consisting of an all ternary quantum well active layer was successfully fabricated. The threshold current density of 1 kA/cm/sup 2/ was obtained, cavity length of 600 /spl mu/m, without the use of a separate confinement heterostructure layer. A very low threshold current density of 300 A/cm/sup 2/ was achieved in an improved structure emitting at 1.3 /spl mu/m.
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