Abstract
The influence of proton exposure on the low-frequency noise of 0.20 μm UHV/CVD SiGe HBTs is presented. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previously developed noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on the first generation SiGe technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
