Proposal for variability-induced effective radius of elliptical gate-all-around junctionless transistors and its applicability in hydrogen gas sensors

Abstract

Nano-ribbons with gate-all-around (GAA) architecture have been predicted to serve as next-generation on-chip transistors, among which, the junctionless transistor (JLT) has emerged as a promising candidate, mitigating few limitations of conventional inversion-mode metal–oxide–semiconductor field-effect transistors (MOSFETs). Due to imperfect fabrication process, the GAA architecture is often subject to cross-sectional variabilities. This work presents an analytical model for the effective radius of elliptical cross-section of the channel region having a non-circular oxide surrounding it, resulting in various structural configurations having non-uniform oxide thickness. To demonstrate the impact of cross-sectional variability of GAA-JLTs, few performance parameters, such as, drain current, threshold voltage, and so on, have been evaluated using our proposed formulation for the effective radius and the results were found to agree well with TCAD simulations. As a case study, we have emphasized on the applicability of our proposed model in variability-induced GAA-JLT-based hydrogen sensors using few sensitivity metrics. Our computations show substantial changes in the sensing device as the cross-section deviates from the ideal circular one. Our computations reveal that incorporating the effects of radius variability in the device model along with proper tuning of operating conditions can enhance the performance and accuracy of such sensors.