Abstract
In this paper, a junctionless (JL) Silicon FinFET (Fin Field effect transistor) has been designed as a hydrogen gas (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) sensor. An analytical model has been developed to analyze the response of junctionless FinFET for detection of hydrogen gas. Palladium is used as a catalytic metal gate. The variation in the gas molecule concentration alters the pressure induced on the catalytic metal gate which changes work function of the metal gate. This variation in metal gate work function is used for detecting the presence of the hydrogen gas. Various electrical parameters for which designed gas sensor is analyzed are- surface potential, threshold voltage, drain current, transconductance, output conductance and charge concentration. The sensitivity analysis in terms of threshold voltage and drain current at different pressures is also carried out. The performance of the sensor with catalytic gate metals-palladium (Pd) and platinum (Pt) is analyzed to find which metal gate gives better response as a hydrogen gas sensor. The JL FinFET is also compared with JL Gate All Around (GAA) transistor for threshold voltage and drain current sensitivity.
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