Performance Optimization and Analysis of a Work function engineered 20nm Grooved channel Junctionless FinFET for Hydrogen Sensing

Abstract

A novel grooved channel, or raised source and drain junctionless FinFET (Fin Field effect transistor), has been developed in this study as a hydrogen gas (H2) sensor. The Visual TCAD simulator examines the response of junctionless FinFET for hydrogen gas detection. Platinum is employed as a catalytic metal gate. Variations in the concentration of gas molecules alter the pressure on the catalytic metal gate, influencing the metal work function. The presence of hydrogen is detected by the change in metal gate work function. The surface potential, threshold voltage, drain current, and transconductance of the developed gas sensor extracted and analyzed. The device performance is tested for hydrogen gas concentration from 10–14 torr to 10–10 torr.