Abstract
Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30°C - 80°C and at 50 % duty cycle (15s ON and 15s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. X-ray photoelectron spectroscopic studies indicated core levels of Cu 2p, In 3d and Se 3d. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. The band gap of the films was in the range of 0.9 to 1.0 eV. The refractive index (n) and extinction co-efficient (k). values were determined from the transmission data. The n and k values are in the ranges of 2.68-1.78 and 0.43-0.083, respectively.
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