Abstract
Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30–80 °C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap of the films decreased from 1.17 to 1.05 eV with decrease of duty cycle. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. Room temperature resistivity of the films is in the range of 0.01–2.0 ohm cm. Films deposited at 50 % duty cycle have exhibited a Voc of 0.59 V, Jsc of 15 mA cm−2, FF of 0.75 and efficiency of 6.64 %.
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