Abstract
Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15s ON and 15s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10nm–40nm as the selenium content increased. The band gap of the films was in the range of 0.95eV–1.44eV. Room temperature resistivity of the films is in the range of 16.0Ωcm–33.0Ωcm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS0.9Se0.1 have exhibited maximum output, a VOC of 0.74V, JSC of 18.50mAcm−2, ff of 0.75 and efficiency of 11.40% for 60mWcm−2 illumination.
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