Abstract
The diffusion of platinum into n- and p-type silicon has been carried out at temperatures ranging from 850 to 1000 °C and for times ranging from 1 to 50 h. Three deep levels associated with platinum were detected by the deep-level transient spectroscopy technique: two acceptor levels of Ec−0.23 and Ec−0.52 eV and a donor level of Ev+0.36 eV. The Ec−0.23 and Ev+0.36 eV levels are produced by platinum occupying the substitutional sites of silicon lattice. The Ec−0.52 eV level has not been characterized but is probably associated with some interstitial platinum-oxygen or other defect complex. Diffusion profiles of the substitutional platinum show that platinum diffuses into silicon mainly via the so-called kick-out mechanism.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
