Selenium implanation into silicon studied by DLTS technique

Abstract

Deep-level transient spectroscopy (DLTS) has been used to determine the activation energy and spatial distribution of the electron traps introduced n-type silicon implanted with 5×1010Se ions/cm2 at 800 keV. Radiation damage levels were demonstrated to be present up to a 600 °C anneal. After 700 °C anneal, two deep levels were found at Ec−0.225 eV and Ec−0.485 eV. The in-depth distributions of the Ec−0.225 eV level after 600 °C anneal and of the two levels after the 700 °C anneal were determined. So, it was found that selenium is a fast diffuser and that each implanted Se ion forms one trap with two levels.