Abstract
The Dit (interface states density) in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS (Deep Level Transient Spectroscopy) technique. It is found that the strong dependence of the Dit on POHT (Preoxidation Heat Treatment) and starting oxygen content of substrates is expected. The DLTS technique can detects the presence of bulk defect (Et - Ev = 0.29eV) at the interface presumably due to chlorine species.
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