Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study

Abstract

The electrical properties of transition metals (TM) in Si were often determined by means of the conventional deep level transient spectroscopy (DLTS) technique. In the present study we demonstrate that the poor resolution of the conventional DLTS technique could lead to the wrong interpretation of the experimental data. On the example of well-known lifetime killers such as titanium and cobalt we show that the dominant defects appeared in samples doped with these impurities were previously wrongly attributed to different charged states of interstitial Ti and substitutional Co. Applying the high-resolution Laplace DLTS technique we re-examine the origin of these defects. Some of these defects will be shown to react with H and shallow acceptors leading to the appearance of new complex defects in the band gap of Si. Their nature will also be discussed in the present paper.