Abstract
We have created YBCO thin film ramp edge Josephson junctions by modification of the edge surface prior to counterelectrode deposition. No deposited interlayer or barrier layer is employed. These devices are uniform and reproducible, and they display resistively shunted junction current-voltage characteristics with excellent magnetic field modulation. IcRn values over the range 0.5–3 mV and corresponding RnA values of 6×10−8–1.2×10−9 Ω cm2 at 20 K are easily attained by varying the process. We believe these junctions offer significant promise as the building blocks of a high Tc electronics technology.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call