Abstract
AbstractBi12SiO20 thin films have been prepared on glass and (0001) sapphire substrates by ECR plasma sputtering with a Bi and Si multitarget system. Polycrystalline thin films of δ-phase Bi12SiO20 have been obtained without any substrate heating. These films can be transformed into γ-phase Bi12SiO20 by heat treatment above 400°C in air and show a large photoconductivity in the range of 380–460 nm. Epitaxial thin films of γ-phase Bi12SiO20 have been obtained on (0001) sapphire substrates at the substrate temperature of 600δ during the sputtering process. Excellent quadratic electrooptic effects for these epitaxial thin films are successfully observed for the first time, and a spatial light modulator using this γ-phase Bi12SiO20 thin film has also been demonstrated. The details of the preparation, structure and some electrical and electrooptic properties of the Bi12SiO20 thin films are described.
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