Abstract
Over the past few decades, a greater need for 3D Vertical NAND (V-NAND) flash memory storage capacity has emerged. Compared to its prevailing technical predecessor, a quad-level cell (QLC) NAND flash memory can be a perfect replacement to meet the needs for the higher density and lower cost non-volatile memory market. However, despite these benefits, QLC’s market share has not been growing significantly because of its worse device reliability and slower performance. In this Paper, a new highly mass-producible and highly reliable 1Tb QLC 3D NAND flash memory with 176-word-line (WL) and Cell-Over-Peripheral (COP) architecture along with a number of significant process advancements will be presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
