Design of Hybrid SSDs With Storage Class Memory and NAND Flash Memory

Abstract

NAND flash memory-based solid-state drives (SSDs) are increasingly being used in both consumer and enterprise storage markets, due to their superior performance over hard disk drives (HDDs) and continuous bit cost reductions. With multiple-level cell technology memory device is capable of trading off the performance and endurance with bit density. The more bits per cell there are, the longer latency and shorter lifetime. On the other hand, the performance of such SSDs is limited due to NAND flash access speed as well as the need of garbage collection. Recently, storage class memories (SCMs) like resistive RAM (ReRAM) and phase change RAM (PRAM) have been developed to fill the bandwidth gap between DRAM and NAND flash memory. SCMs are nonvolatile and byte addressable, which are much faster and durable than NAND flash. Therefore, with SCMs, the storage performance would be significantly improved. Hybrid SSDs are promising cost-efficient storage solutions. Various types of memories like single-level cell (SLC), multiple-level cell (MLC), triple-level cell (TLC) NAND flash memories, and SCMs create lots of opportunities for new system architectures and algorithms. In this paper, the architecture and algorithm design overview of three types of hybrid drives including MLC/TLC NAND flash hybrid, SCM/MLC NAND flash hybrid, and SCM/MLC/TLC NAND flash tri-hybrid are presented. From the evaluation results, hybrid drives demonstrate better performance, endurance, and power consumption, compared to the MLC NAND flash only SSD. Furthermore, the relationship between device reliability and performance of the SCM/NAND flash hybrid SSD has been understood at a system level. There is a tradeoff between acceptable bit error rate of SCM and NAND flash. In addition, the decoding latency of SCM affects the performance of hybrid SSD more than that of NAND flash.