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https://doi.org/10.1049/el:19810163
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Cite Journal: Electronics Letters |  Publication Date: Mar 19, 1981 |
 Citations: 3 |
Affiliation: University of Surrey
Pressure-induced changes in the hole mobility of the quaternary alloy In1-xGaxAsyP1-y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.
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