Abstract
Consistent hydrodynamical models for electron transport in semiconductors. free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12(2000) 31 for silicon and in Continuum Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use tlie same approach for studying the hole transport in Si. by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an eexplicit expression for the low field hole mobility have been obtained. Tlie high field mobility is also analyzed by taking into account tlie influence of impurities.
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