Preparation of Transparent Metal Films, Gallium-Doped Zinc-Oxide (Ga2O3)x (ZnO)100-x Films by Using Facing Target Sputtering System

Abstract

(Ga2O3)x(ZnO)100-x, x = 3, 5, 7, 9 wt.%, (GZO) films were prepared at room temperature by using a conventional rf-magnetron sputtering method. Their electrical resistivity was investigated as a function of the Ga2O3 content. The GZO film with x = 7 wt.%, shows the lowest resistivity of 1.5×10−3Ω. cm. This GZO films were also prepared at various substrate temperatures from room temperature to 400°C, Their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of 4.5×10−4Ω.cm was obtained in the film prepared at the substrate temperature of 300°C. In addition, we found that the GZO films prepared by using facing target sputtering (FTS) system showed a dramatically improved conductivity as compared with that of the film prepared by the conventional sputtering system. In particular, we also found that the lowest resistivity of 2.8×10−4Ω.cm that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of 300°C by using the facing target sputtering (FTS) system.