Abstract
The iron nitride thin films have been deposited using a facing targets sputtering (FTS) system and a conventional dc diode magnetron sputtering system, and their crystallographic characteristics and magnetic properties have been investigated. The total gas pressure (PN2+PAr) was set at 2 mTorr. The films deposited by the FTS system without heating the substrate at PN2 below 0.3 mTorr possessed α-Fe-like structure with an increased lattice constant. At PN2 of around 0.5 mTorr, a two-phase mixture of α-Fe and Fe2–3N was formed in the films prepared in the FTS system, while ζ-Fe2N phase was formed in the films prepared by dc magnetron sputtering. The films prepared by FTS at PN2 of 0.1 mTorr possessed α-Fe and γ′-Fe4N structures when a substrate temperature (Ts) was in the range from 80 to 300 °C. The films deposited at Ts of about 150 °C possessed a saturation magnetization (Ms) of about 1700 emu/cm3, which is larger than that of pure iron films and coercivity (Hc) of about 1.5 Oe.
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