Abstract
This paper introduces a magnetron facing target sputtering (FTS) system in detail. The facing arranged targets, the especially applied magnetic field, and the substrate placed outside the plasma region make this kind of apparatus convenient to fabricate metallic films free of the bombardment of high-energy particles. Large-area uniformity, high and uniform deposition rate, low substrate temperature, relatively free of inert incorporation and composition deviation are achieved. Compared with the conventional magnetron sputtering system, the FTS is of great advantage for sputtering ferromagnetic materials. By using the FTS system, we have been able to obtain iron and Fe 16N 2 single-crystal films.
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