Abstract
Indium Zinc Tin Oxide (IZTO) thin-films for OLED (organic light-emitting diode) anodes were prepared through a Facing Target Sputtering (FTS) system under various sputtering conditions. The FTS system has several advantages such as hetero-sputtering, low working pressure, and high plasma density. When two sheets of targets are installed on an FTS system, one of the targets is IZO (In2O3 90wt%, ZnO 10 wt%) and the other target is ITO (In2O3 90wt%, SnO2 10wt%). As-deposited IZTO thin-films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a Hall-Effect measurement system, and an atomic force microscope (AFM). The properties of the OLEDs were measured through a J-I-V measurement system. The IZTO thin-films that were deposited on glass substrate showed an average transmittance of over 80% in a visible range except for IZTO thin-film that was deposited under an O2 gas flow rate of 0.1 [sccm].
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