Abstract
<TEX>$(Ga_2O_3)_x(ZnO)_{100-x}$</TEX> (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the <TEX>$Ga_2O_3$</TEX> content. The GZO film with an atomic ratio of <TEX>$Ga_2O_3$</TEX> of x= 7 wt.%, shows the lowest resistivity of <TEX>$7.5{\times}10^{-4}{\Omega}{\cdot}cm$</TEX>. The GZO films were also prepared at various substrate temperatures from room temperature to <TEX>$300^{\circ}C$</TEX>, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of <TEX>$2.8{\times}10^{-4}{\Omega}{\cdot}cm$</TEX> that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of <TEX>$300^{\circ}C$</TEX> by using the FTS.
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