Preparation of thin films of dielectric materials using high-density ablation plasma produced by intense pulsed ion beam

Abstract

By use of a high-density ablation plasma produced by the interaction of an intense pulsed light-ion beam with a solid target, the preparation of thin films has been successfully demonstrated, and is called ion beam evaporation (IBE). In addition to a standard front-side deposition of thin films (FS/IBE), significant improvement of the films has been achieved with much better morphology as well as electrical properties by back-side deposition (BS/IBE), In the BS/IBE configuration, the substrate is placed on the reverse side of the target holder, being free from droplets sometimes observed by the FS/IBE. Using BaTiO 3, (Ba 0.5, Sr 0.5)TiO 3 and SrTiO 3 targets, experimental results are presented in detail on the preparation of these thin films by the BS/IBE.