Abstract
Boron carbide (B4C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B4C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B4C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B4C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B–C combination and the vibration of B12–B12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be HV∼2300.
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