Abstract

By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science.

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