Preparation of SrMoO 4 thin films on Si substrates by chemical solution deposition

Abstract

Crystallized SrMoO 4 thin films were prepared on (1 0 0)-oriented Si substrates by chemical solution deposition (CSD) method. The effects of the processing parameters on the growth of the films were investigated. Dense scheelite-type SrMoO 4 thin films could be prepared when calcined between 350 and 800 °C. The absorption band related to vibration mode of MoO 4 2− tetrahedra in Fourier transform infrared (FT-IR) spectra of SrMoO 4 thin films annealed at 350–900 °C was observed that undoubtedly confirmed the appearance of SrMoO 4 phase. The results showed that CSD method could be used to prepare SrMoO 4 thin films at rather low temperatures.