Abstract
Ferroelectric (Bi,R)4Ti3O12 [R: rare earth] thin films were synthesized by the chemical solution deposition (CSD) method. Heat treatment above 600°C was required for the fabrication of crystalline (Bi,R)4Ti3O12 thin films of Bi-layered perovskite structure on Pt/TiOx/SiO2/Si substrates. The orientation of the films prepared at 750°C depended upon the kind of substituent rare earth ions. Bi4.12Ti3O12 (BIT) and Bi3.35La0.75Ti3O12 (BLT) thin films revealed (00l) preferred orientation. On the other hand, Bi3.35Nd0.75Ti3O12 (BNT), Bi3.35Sm0.75Ti3O12 (BST) and Bi3.35Gd0.75Ti3O12 (BGT) thin films showed random orientation with strong (117) reflection. Synthesized (Bi,R)4Ti3O12 films exhibited the typical ferroelectric behavior. The BNT thin film showed Pr of 21.6 µC/cm2, which was higher than the values of the other rare earth-doped BIT thin films.
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