Abstract
Nanocrystalline CaMoO4 (CMO) thin films were fabricated on Si and glass substrates via the chemical solution deposition (CSD) method. From x-ray diffraction, atomic force microscopy and Fourier transform infrared spectra results, relatively smooth Scheelite-type CMO thin films can be fabricated within the annealing temperature range from 400 to 700 °C. The band gap is 4.18 eV calculated from the optical transmission spectra and the photoluminescence (PL) emission spectra show that the CMO thin films on Si have a broad green emission band centred at 490 nm. Our experimental results show that the CSD method is an alternative method to prepare nanocrystalline CMO thin films with a great PL property at low annealing temperatures.
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