Preparation of high-purity InP by the synthesis, solute diffusion technique

Abstract

High-purity InP crystals were prepared by the synthesis, solute diffusion (SSD) technique. By vacuum baking of raw indium at 900 °C for 6 h, the first-to-freeze part of InP had a carrier concentration of ND−NA = 6.4×1014 cm−3 at 300 K and a mobility of μ = 79 100 cm2/V sec at 77 K. It is concluded that S and/or Si contained in In raw material are dominat donor impurities in the SSD-InP crystal, because their contents can be decreased by the vacuum baking.