Abstract
A growth-rate controlled synthesis-solute diffusion (GRC-SSD) technique is demonstrated for rapid growth of high purity InP single crystals. Large-sized InP boules 34 mm in diameter and 80 mm in length were prepared at a rate of 10 mm/day by this technique, whose growth rate is three times larger than that of the conventional SSD technique. X-ray topography and Hall measurements were performed for the GRC-SSD grown InP single crystal.
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