Abstract
This letter presents a study of high purity InP crystals grown at a high temperature of 1000°C by synthesis, solute-diffusion (SSD) technique. The technique employs a capillary, having an inner diameter of 1–2 mm and a length of 140 mm, as a barrier for preventing In 2O vapor from diffusing into the lower temperature zone. The results confirm that the capillary is effective for producing high purity crystals having high Hall mobilities of mor than 10 5 cm 2/V· at 77 K by suppressing silica crucible reduction.
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