Abstract
A composite film of nanocrystalline Si (nc-Si) embedded in (Al 2O 3 + SiO 2) has been prepared on a quartz substrate by thermally evaporating a 400 nm thick Al film on a quartz substrate and annealing in air at 580 °C for 1 h. During annealing, the Al reacts with the SiO 2 of the quartz substrate and produces nc-Si, which is embedded in the (Al 2O 3 + SiO 2) film. The average size of nc-Si is ~ 22 nm and the thickness of the nc-Si:(Al 2O 3 + SiO 2) composite film is ~ 810 nm. It is found that the prepared film is thermoelectric with a Seebeck coefficient of − 624 μV/K at 293 K and − 225 μV/K at 413 K.
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