Abstract
We have recently studied the preparation and the characterization of the films deposited by metalorganic chemical vapor deposition (MOCVD) using liquid state sources [Y. Yoshida, Y. Ito, I. Hirabayashi, H. Nagai, Y. Takai, Appl. Phys. Lett. 69 (1996) 845; Y. Ito, Y. Yoshida, Y. Mizushima, I. Hirabayashi, H. Nagai, Y. Takai, Jpn. J. Appl. Phys. 35 (1996) L825.]. In this paper, we describe the CVD process for the ultra-flat YBCO films block-by-block deposition using liquid sources. The high stability and good controllability of the sources enable us to study the early stage of epitaxial growth by depositing c-axis-oriented films with different number of sequence and different kind of substrates. Investigating the films deposited at 800°C, we confirmed that the initial growth of YBCO films on MgO is multinuclear growth, and in the early stage ( t≤200 Å), spiral growth appears, whereas that on SrTiO 3 is two-dimensional growth and spiral growth appears after coalescence of initially grown crystallites having a flat-faceted surface.
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