Abstract
The preparation of manganese-doped GaAs epitaxial layers growth from the liquid-phase, and Hall effect and resistivity measurements in the temperature range from 60 to 300°K, are described. An anomalous solubility of GaAs in the Ga + GaAs + Mn solution was observed and occurrence of a Mn 2As-phase in solution was identified. From the analysis of the Hall effect measurements the thermal activation energy of the manganese acceptor was determined. The energy decreases from 0·092 to 0·084 eV with the Mn-concentration in the epitaxial layers increasing from 6 × 10 17 cm −3 to 3 × 10 19 cm −3. The solubility of Mn in GaAs at the temperature of the preparation (850°C) was found to be about 4 × 10 19 cm −3.
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