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Abstract
Hall effect and resistivity measurements on Be implanted GaAs 1- x P x (x∼0.38) indicate that essentially 100% doping efficiency may be obtained for normal Be concentrations after a 900°C anneal using either SiO 2 or Si 3N 4 as an encapsulant. The temperature dependence of hole mobility in these samples exhibits impurity banding effects similar to those reported in heavily Zn doped GaAs. Hall effect measurements in conjunction with successive thin layer removal techniques indicate there is no significant diffusion of the implanted Be during anneal for a fluence of 6×10 13 ions/cm 2.
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