Abstract

Atomic, optically active, and electrically active profiles measured for 250 keV ion-implanted Be in GaAs as a function of fluence have been correlated. Be atomic depth profiles were obtained by secondary-ion mass-spectroscopy (SIMS) techniques. Photoluminescence and Hall effect measurements made in conjunction with successive layer removal were used to obtain the optically and electrically active profiles. Atomic SIMS profiles obtained from samples implanted to a fluence of 6X10113cm-2 showed no major distribution changes after a 900°C, 30 min anneal treatment. Electrically active profiles obtained from duplicate samples had distributions which were similar to the SIMS results. Hall effect and resistivity measurements after annealing indicated nearly complete electrical activity of the implanted Be, with mobility values typical of p-type bulk material.

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