Preparation and Photovoltaic Properties of Ternary AgBiS2 Quantum Dots Sensitized TiO2 Nanorods Photoanodes by Electrochemical Atomic Layer Deposition

Abstract

Ternary AgBiS2 quantum dots (QDs) were assembled onto TiO2 nanorods (NRs) film for QD-sensitized solar cell (QDSSC) application by a simple electrochemical atomic layer deposition method (ECALD). Various kinds of methods such as XRD, SEM, EDX and TEM were employed to characterize the structure and morphology of the deposits. The results indicate that stoichiometric AgBiS2 QDs of cubic structure were synthesized and homogeneously anchored on the TiO2 NRs. Furthermore, the optical absorbance of AgBiS2 sensitized TiO2 NRs was greatly enhanced in visible region compared to that of bare TiO2. The QDSSCs based on the AgBiS2 sensitized TiO2 NRs photoanodes were constructed and a maximum photoconversion efficiency of 0.95% with a short-circuit current density of 4.22 mA/cm2, an open-circuit voltage of 0.53 V and a fill factor of 0.43, has been achieved. The inspiring parameters demonstrate that AgBiS2 QDs can be a prospective light absorber in solar cells.