Abstract
We report the characteristics of ternary InAlP and InGaP self-assembled quantum dots grown by metalorganic chemical vapor deposition. The structural and optical properties of these ternary quantum dots are compared with the characteristics of binary InP quantum dots grown under similar conditions. Because these ternary quantum dots have different bandgaps, strain, and composition compared to binary InP quantum dots, the ternary quantum-dot optical and physical properties are markedly different. The quantum-dot structures are grown uncapped (exposed QDs) and capped (embedded QDs) and characterized by atomic force microscopy (AFM) and photoluminescence (PL). InAlP quantum dots have higher densities and smaller sizes and InGaP quantum dots have smaller densities, as compared with InP quantum dots grown under similar conditions. Also, a random and broad size distribution is observed for InGaP quantum dots and the luminescence from InGaP dots is broader than for InP quantum dots.
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