Abstract
Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.
Highlights
Resistive random access memory (RRAM), as one of the most promising candidates of generation nonvolatile memories, has received much attention[1,2,3,4]
According to the oxygen potential diagram of metal oxides, two types of metal electrodes which are separately relatively inert (Ta) and active (Al, Cr, Sm) to In, are considered in this work. They are directly deposited on indium tin oxide (ITO) at room temperature, and bipolar resistive switching (BRS) is observed in the active electrodes (Al, Cr, Sm)/ITO structure while no resistive switching is found in the Ta/ITO
Point contact resistive switching memory based on active Al electrode/ITO structure is deposited by sputtering at room temperature
Summary
Resistive random access memory (RRAM), as one of the most promising candidates of generation nonvolatile memories, has received much attention[1,2,3,4]. Sequential stacking of switching layer and top electrode would require different fabrication and patterning process This inevitably results in the large increase of the complexity of the circuits and the cost of the devices. According to the oxygen potential diagram of metal oxides, two types of metal electrodes which are separately relatively inert (Ta) and active (Al, Cr, Sm) to In, are considered in this work. They are directly deposited on indium tin oxide (ITO) at room temperature, and BRS is observed in the active electrodes (Al, Cr, Sm)/ITO structure while no resistive switching is found in the Ta/ITO.
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