Abstract
This paper presents piezoelectricity in germanium-doped silica (germanosilicate) films produced by poling treatment. The germanosilicate films were prepared on Si substrates by RF magnetron sputtering. The films were poled by electric fields of 2–4 ×107 V/m at a temperature above 300°C. Before the poling, no piezoelectric response was observed. After the poling, a 0piezoelectric response caused by normal stress T33 on the film surface appeared. The maximum value of the piezoelectric constant d33 of the poled film was larger than d11 of quartz by 20–30%. Various applications of the piezoelectric Ge:SiO2 film are expected to emerge.
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