Abstract
Piezoelectricity was produced in superlattice silica films with tetravalent metal dopants by poling. Poling treatment in germanium-doped silica (Ge:SiO2) glass films raises their optical nonlinearity and producers, among other things, the Pockels effect. We generated piezoelectricity in poled Ge:SiO2 glass thin films. Tetravalent-metal-doped SiO2 (M4+:SiO2) films were prepared on Si substrates by RF magnetron sputtering. We used germanium, titanium, and tin as doping materials. The piezoelectricity of the films was compared with that of quartz. The piezoelectricity of the same order of magnitude as that of quartz was observed in the M4+:SiO2 films. However, less than a week later, piezoelectricity disappeared almost completely in all the samples. To prevent piezoelectricity from disappearing, we attempted to pin the doping ions. We developed a pinning technique based on the structure of a Ge:SiO2–Ti:SiO2–Sn:SiO2 superlattice. This superlattice structure was very effective in preventing piezoelectricity from disappearing. Furthermore, broadband visible light emission was observed in the proposed superlattice film.
Published Version
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