Abstract
Abstract Molybdenum disulfide (MoS2) deposited by sputtering holds promise for applications in areas such as three-dimensional (3D)-stacked field-effect transistors (FETs) and human-interface devices. The quality of the MoS2 film is enhanced by maintaining a low particle flux with sufficient energy flux during sputtering. Furthermore, the sulfur defects in the MoS2 films were suppressed by annealing in a sulfur-vapor atmosphere, leading to an improvement in the film quality. This technology has great potential for the development of high-performance FETs based on MoS2 channels using sputtering.
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