Abstract
In this work, quercetin/ p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by current–voltage and capacitance–voltage measurements at room temperature. A barrier height and an ideality factor value of 0.86 eV and 3.20 for this structure in dark have been obtained from the forward bias current–voltage characteristics. From the capacitance–voltage measurement, the barrier height and free carrier concentration values for the quercetin/ p-InP device have been calculated as 1.63 eV and 3.8×10 17 cm −3, respectively. Also, series resistance calculation has been performed by using Cheung theory. The device exhibits a strong photovoltaic behavior with a maximum open circuit voltage V oc of 0.36 V and short-circuit current I sc of 35.3 nA under 120 lx light intensity only.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
