Abstract
Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current–voltage and capacitance–voltage measurements at room temperature. Schottky barrier height and ideality factor values were determined from current–voltage characteristics of identically prepared twenty Ag/p-GaSe:Gd Schottky barrier diodes. By applying thermionic emission theory, the obtained barrier height and ideality factor values varied from 0.69 to 0.85 eV, and from 1.13 to 1.74, respectively. The homogeneous barrier height of Schottky barrier diodes was found to be 0.83 eV from the linear relationship between barrier height and ideality factor values.
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