Abstract
The electrical and photovoltaic properties of AuSb/n-Si/chitosan/Ag diode have been investigated. The ideality factor, barrier height and Richardson constant values of the diode at room temperature were found to be 1.91, 0.88 eV and 121.4 A/cm 2 K 2, respectively. The ideality factor of the diode is higher than unity, suggesting that the diode shows a non-ideal behaviour due to series resistance and barrier height inhomogeneities. The barrier height and ideality factor values of Ag/CHT/n-Si diode at room temperature are significantly larger than that of the conventional Ag/n-Si Schottky diode. The φ B value obtained from C– V measurement is higher than that of φ B value obtained from I– V measurement. The discrepancy between φ B( C– V) and φ B( I– V) barrier height values can be explained by Schottky barrier height inhomogeneities. AuSb/n-Si/chitosan/Ag diode indicates a photovoltaic behaviour with open circuit voltage ( V oc = 0.23 V) and short-circuit current density ( J sc = 0.10 μA/cm −2) values.
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