Fabrication and electrical characterization of Au/Pyronine-G/p-Si diode

Abstract

Au/Pyronine-G/p-Si diode was fabricated via solution-processing method. The current–voltage and the capacitance–voltage characteristics of the diode were measured at room temperature. It was seen that a rectifying behavior from the current–voltage characteristics and the current in the reverse direction was increased by white light-illumination. The characteristic parameters of the device such as barrier height, ideality factor and interface states density were determined from the current–voltage measurements. Also, Norde method was used to evaluate the current–voltage characteristics. From the dark current–voltage characteristics, the values of ideality factor and barrier height of the device were calculated as 1.36 and 0.78eV, respectively. It was seen that this barrier height value calculated for the Au/Pyronine-G/p-Si diode was significantly larger than the value of conventional Au/p-Si Schottky diodes at room temperature. The energy distribution of the interface state density determined from the current–voltage characteristics increased exponentially with bias from 1.05×1010eV−1cm−2 at (0.74 EV)eV to 1.19×1012 at (0.49 EV)eV−1cm−2. The barrier height and acceptor carrier concentration values for the Au/Pyronine-G/p-Si diode was extracted as 0.92eV and 9.35×1014cm−3 from linear region of its the capacitance–voltage characteristics at 1MHz, respectively.