Abstract
Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5–25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.