Abstract
Abstract Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5–25 nm) layers and sharp interlayer boundaries can be deposited entirely under laser photolytic control, using low reactant gas partial pressures and with the excimer laser beam parallel to the substrate. Growth of epitaxial films and structures under similar conditions is discussed.
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