Abstract
The photoluminescence spectra of CuInS 2 prepared by different methods have been investigated, in which single crystals were grown by chemical vapor transport, melt solidification and travelling heater method, thin films were prepared by three source evaporation, and epitaxial layers were grown by liquid phase epitaxy. The broad band emissions and their composition dependance are reported. The various radiative transitions and the donor and acceptor-levels involved are discussed.
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